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基于藍寶石襯底的全區(qū)域覆蓋的單層二硫化鎢

簡要描述:This product contains full area coverage WS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WS2 sheet.

  • 更新時間:2024-06-03
  • 產(chǎn)品型號:
  • 廠商性質(zhì):生產(chǎn)廠家
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詳細介紹

This product contains full area coverage WS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WS2 sheet. Synthesized full area coverage monolayer WS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.



Sample Properties.

Sample size

1cm x 1cm square shaped

Substrate type

(0001) c-cut sapphire

Coverage

Full coverage monolayer

Electrical properties

2.0 eV Direct Bandgap Semiconductor

Crystal structure

Hexagonal Phase

Unit cell parameters

a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°

Production method

Low pressure Chemical Vapor Deposition (LPCVD)

Characterization methods

Raman, photoluminescence, TEM, EDS

Specifications

1)    Identification. Full coverage 100% monolayer WS2 uniformly covered across c-cut sapphire

2)    Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3)    Smoothness. Atomically smooth surface with roughness < 0.2 nm.

4)    Uniformity. Highly uniform surface morphology. WS2 monolayers uniformly cover across the sample.

5)    Purity. 99.9995% purity as determined by nano-SIMS measurements

6)    Reliability. Repeatable Raman and photoluminescence response

7)    Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8)    Substrate. c-cut Sapphire but our research and development team can transfer WS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

9)    Defect profile. WS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected WS2 using α-bombardment technique.


Supporting datasets [for 100% Full area WS2 coverage on c-cut Sapphire]


 Transmission electron images (TEM) acquired from CVD grown full area coverage WS2 monolayers on c-cut sapphire confirming highly crystalline nature of monolayers

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer WS2 on c-cut sapphire confirming W:S 1:2 ratios


Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage WS2 monolayers on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 2.00 eV in agreement with the literature.


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